smd type features adoption of fbet process high breakdown voltage (v ceo =160v) excellent linearlity of h fe and small c ob fast switching speed 2SC3645 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 5v collector current i c 140 ma collector current (pulse) i cp 200 ma p c 500 mw p c* 1.3 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = 80v , i e = 0 100 na emitter cut-off current i ebo v eb =4v,i c = 0 100 na dc current gain h fe v ce =5v,i c = 10ma 100 400 collector-emitter saturation voltage v ce(sat) i c = 50ma , i b = 5ma 0.14 0.4 v gain-bandwidth product f t v ce = 10v , i c = 10ma 150 mhz collector output capacitance c ob v cb = 10v , i e =0,f=1mhz 4 pf turn-on time t on 0.1 storage time t stg 1.5 fall time t f 0.1 s see test circuit. product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
smd type electrical characteristics curves test circuit h fe classification marking rank r s t h fe 100 200 140 280 200 400 ca product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2SC3645 4008-318-123
smd type product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 2SC3645 4008-318-123
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